Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer
出版年份 2016 全文链接
标题
Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer
作者
关键词
Dark Current, Ga2O3, Ga2O3 Film, Ga2O3 Thin Film, Ga2O3 Layer
出版物
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 122, Issue 12, Pages -
出版商
Springer Nature
发表日期
2016-11-21
DOI
10.1007/s00339-016-0576-8
参考文献
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