期刊
APPLIED PHYSICS LETTERS
卷 97, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3462319
关键词
elemental semiconductors; etching; II-VI semiconductors; nanowires; passivation; photodiodes; semiconductor heterojunctions; semiconductor quantum wires; semiconductor thin films; silicon; silicon compounds; wide band gap semiconductors; zinc compounds
资金
- National Science Council of the Republic of China [NSC-96-2628-M002-011-MY3]
Influence of a SiO2 ultrathin film on n-ZnO/p-silicon nanowires photodiodes has been investigated. With a SiO2 thin layer, the diode characteristics can be significantly improved, which exhibits high responsivity under a reverse bias. Based on the electron conversion efficiency measurement, we show that the ultrathin SiO2 layer with positive fixed charges not only acts as a hole blocking layer but also helps the photogenerated electrons to tunnel through the barrier. In addition, the SiO2 layer can effectively passivate the defects generated by wet etching process. It is expected that our approach can be extended to many other nanoscale heterojunction devices. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3462319]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据