Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer
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Title
Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer
Authors
Keywords
Dark Current, Ga2O3, Ga2O3 Film, Ga2O3 Thin Film, Ga2O3 Layer
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 122, Issue 12, Pages -
Publisher
Springer Nature
Online
2016-11-21
DOI
10.1007/s00339-016-0576-8
References
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