期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 49, 期 28, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/28/285111
关键词
beta-Ga2O3/4H-SiC; n-n type heterojunctions; oxygen vacancies; L-MBE
资金
- National Natural Science Foundation of China [51572033, 11404029, 51172208, 51072182]
- Fundamental Research Funds for the Central Universities [2014RC0906]
- China Postdoctoral Science Foundation [2014M550661]
- National Basic Research Program of China (973 Program) [2010CB933501, 2010CB923202]
beta-Ga2O3/4H-SiC n-n type heterojunctions have been fabricated by depositing high quality beta-Ga2O3 films on c-axis orientation n-type 4H-SiC substrates using laser molecular beam expitaxy. The influences of oxygen vacancies on the junction performances are investigated. It is found that the existence of oxygen vacancies degrades the rectifying and photoresponse properties of the heterojunctions. A large rectification ratio of 1900, a high 254 nm ultraviolet photosensitivity of 6308% and a zero response of 365 nm ultraviolet have been achieved by reducing oxygen vacancies. It is supposed that the oxygen vacancies in Ga2O3 affect the depletion layer of the n-n junction greatly.
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