Article
Materials Science, Multidisciplinary
H. Wang, J. Ma, L. Cong, D. Song, L. Fei, P. Li, B. Li, Y. Liu
Summary: In this work, dual-band ultraviolet photodetectors with peak responses at solar blind and near UV region were fabricated successfully, showing low dark current and high gain. These devices hold promise for developing high-performance dual-band photodetectors in the UV range.
MATERIALS TODAY PHYSICS
(2022)
Article
Chemistry, Physical
Jianjun Shi, Hongwei Liang, Xiaochuan Xia, Qasim Abbas
Summary: In this study, single-oriented CuGaO2 films were successfully grown on beta-Ga2O3 substrate. Investigation of energy band offsets and alignment at CuGaO2/beta-Ga2O3 heterojunction revealed a type-II band alignment. The prepared CuGaO2/beta-Ga2O3 heterojunction-based ultraviolet photodetector exhibited a significant ultraviolet photoresponse at zero bias voltage, showing potential for future self-power deep UV optoelectronic devices facilitated by the combination of beta-Ga2O3 and wide bandgap delafossite oxide semiconductor.
APPLIED SURFACE SCIENCE
(2021)
Article
Physics, Multidisciplinary
Yue Zhao, Jin-Hao Zang, Xun Yang, Xue-Xia Chen, Yan-Cheng Chen, Kai-Yong Li, Lin Dong, Chong-Xin Shan
Summary: This work introduces a photodetector that integrates Chlorin e6 with gallium oxide, achieving responses in both deep ultraviolet and visible light bands, improving recognition rate.
Article
Nanoscience & Nanotechnology
Weiqiang Gong, Jun Yan, Feng Gao, Sunan Ding, Gaohang He, Lin Li
Summary: A simple sandwich structure photodetector is designed and fabricated, which exhibits enhanced detection performance in the UV and visible light regions. This photodetector shows high responsivities and self-powered response characteristics, providing a simple and effective method for the preparation of high-performance self-powered imaging photodetectors in the UV-visible region.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Jiangang Yu, Jianshe Lou, Zhuo Wang, Siwei Ji, Jiajie Chen, Miao Yu, Bo Peng, Yanfei Hu, Lei Yuan, Yuming Zhang, Renxu Jia
Summary: In this study, the potential of Pt nanoparticles in modifying the surface of beta-Ga2O3 layer was investigated to enhance the performance of beta-Ga2O3-based devices with a novel asymmetric metal-semiconductor-metal (MSM) structure. The results showed that Pt nanoparticles could significantly improve carrier generation and overcome the high dark current in traditional MSM detectors. The improved device exhibited high responsivity, detectivity, and photocurrent-to-dark current ratio, demonstrating a considerable enhancement compared to the pristine device.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Haizheng Hu, Lipeng Deng, YuChen Zhu, Chao Wu, Daoyou Guo, Shunli Wang
Summary: Gallium oxide (Ga2O3) semiconductor with a wide bandgap of 4.9 eV has garnered increasing interest in the optoelectronic field. However, the fabrication of Ga2O3 pn junction remains challenging due to the infancy of p-Ga2O3 doping technology. In this study, a solar-blind photodetector was developed using vertical alpha/beta-Ga2O3 junction nanorod arrays (NRAs) and a Ti3C2-Ag NWs top electrode, which exhibited improved conductivity, optical transparency, and excellent photo-electric performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Physical
Meijiao Xing, Dayong Jiang, Man Zhao
Summary: A new sandwich-structured photodetector (SSPD) was designed and fabricated to solve the problem of weak light detection in traditional metal-semiconductor-metal (MSM) photodetectors. A high external quantum efficiency (EQE) was achieved by growing Ga2O3 film layer on the electrode area of the ZnO/Au MSM-structured device. The ZnO/Au/Ga2O3 SSPD showed an EQE of up to 11626% at 30 V, which is 18 times higher than the traditional ZnO/Ga2O3/Au PD.
APPLIED SURFACE SCIENCE
(2023)
Article
Physics, Applied
Zuyin Han, Shuang Song, Huili Liang, Hang Shao, Sigui Hu, Yan Wang, Jiwei Wang, Zengxia Mei
Summary: This study developed three-terminal InGaZnO (IGZO)/a-Ga2O3 dual-active-layer (DAL) transistors, successfully realizing the ability of a-Ga2O3 as the active layer in both switching and sensing. By introducing an ultrathin IGZO electron reservoir and controlling the defects of a-Ga2O3, the DAL device demonstrated stable and superior gate-control capability with high on/off ratio, field-effect mobility, and low sub-threshold swing.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Yingying Cheng, Jiaxing Mao, Hongyi Zhu, Yanhui Dong, Jian Chen, Mingkai Li, Yinmei Lu, Yunbin He
Summary: In this study, a strategy for constructing Ga2O3/BFMO heterojunction-based photodetectors was proposed to enhance responsivity and detectivity by utilizing the built-in electric field and ferroelectric depolarization electric field for carrier separation. The fabricated photodetector exhibited tunable performance under zero bias, with higher performance observed in the upward poling state and under weak light illumination.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Physics, Applied
Zemian Wu, Yu Liu, Junxiong Guo, Wen Huang
Summary: The letter introduces an advanced dual-band detector based on patterned graphene integrated with a gold array, which exhibits ultra-high photoresponse performance in both visible and mid-infrared light bands and allows for wavelength tuning by adjusting certain parameters. The demonstration of a surface plasmon resonance enhanced detector brings us closer to high sensitivity room-temperature multiband devices.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Shan Li, Jian-Ying Yue, Chao Wu, Zeng Liu, Zu-Yong Yan, Pei-Gang Li, Dao-You Guo, Zhen-Ping Wu, Yu-Feng Guo, Wei-Hua Tang
Summary: Self-powered ultraviolet photodetectors based on beta-Ga2O3/WO3 nanoparticles exhibit excellent photodetection properties with low noise, high photo-to-dark current ratio, and outstanding spectral selectivity, paving the way for next-generation nanodevices.
IEEE SENSORS JOURNAL
(2021)
Article
Nanoscience & Nanotechnology
Guang Zeng, Xiao-Xi Li, Yu-Chun Li, Ding-Bo Chen, Yu-Chang Chen, Xue-Feng Zhao, Na Chen, Ting-Yun Wang, David Wei Zhang, Hong-Liang Lu
Summary: A high-performance photodetector using exfoliated beta-Ga2O3 flakes and zero-dimensional graphene quantum dots (GQDs) is reported, which shows enhanced photoresponsivity and photoelectric performance through effective charge transfer and holds potential for commercial applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Ling-Xuan Qian, Zhiwen Gu, Xiaodong Huang, Hongyu Liu, Yuanjie Lv, Zhihong Feng, Wanli Zhang
Summary: This study presents a metal-semiconductor-metal photodetector with a beta-Ga2O3 homojunction structure achieved by low-energy surface fluorine plasma treatment for surface passivation. The fluorine dopants were used to passivate oxygen vacancies and suppress surface chemisorption, resulting in an improvement in both dark and photo current characteristics. The sensitivity was enhanced by nearly 1 order of magnitude, showcasing competitive comprehensive properties for beta-Ga2O3 solar-blind metal-semiconductor-metal photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Chun-Ying Huang, Yen-Yang Liu, Pei-Te Lin, Guan-Yu Lin, Cheng-Ping Chou, Pei-Chun Liao, Feng-Hsuan Hsu, Yu-Hsiang Peng, Zi-Ling Huang, Tai-Yuan Lin, Jyh-Rong Gong
Summary: A series of beta-Ga2O3 films were prepared using TEGa and N2O as precursors to investigate the impact of N2O/TEGa ratio. The study found that increasing the N2O/TEGa ratio can suppress oxygen vacancies in beta-Ga2O3 films and significantly improve device performance. This research provides insight into the influence of TEGa/N2O ratio on the quality, surface morphology, chemical composition, and device performance of UV PDs.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Yuehui Wang, Shengyao Li, Jia Cao, Yucheng Jiang, Yang Zhang, Weihua Tang, Zhenping Wu
Summary: Ga2O3-based solar-blind ultraviolet photodetectors have garnered significant attention for various applications. While they have made progress in key metrics, such as responsivity and detectivity, their response time remains slow. This study investigates the impact of illumination intensity and bias voltage on the response speed of a Ga2O3-based PD, revealing the mechanisms behind accelerated response time. The findings provide insights for optimizing the performance of Ga2O3-based PDs.
MATERIALS & DESIGN
(2022)
Article
Physics, Multidisciplinary
Zeng Liu, Ling Du, Shao-Hui Zhang, Ang Bian, Jun-Peng Fang, Chen-Yang Xing, Shan Li, Jin-Cheng Tang, Yu-Feng Guo, Wei-Hua Tang
Summary: A flower-like SnO2-SnO/porous GaN (FSS/PGaN) heterojunction was fabricated for the first time, involving a spraying process, hydrothermal preparation of FSS, and electrochemical wet etching of GaN. The loaded SnO2-SnO composites with p-n junctions on the PGaN surface exhibited excellent transport capability, achieving a short response time and release time for H2S sensing. The obtained sensor showed high stability and potential for various applications.
Article
Physics, Multidisciplinary
Li-Li Yang, Yu-Si Peng, Zeng Liu, Mao-Lin Zhang, Yu-Feng Guo, Yong Yang, Wei-Hua Tang
Summary: A self-powered solar-blind ultraviolet (UV) photodetector (PD) was successfully fabricated on a Ga2O3/Bi2WO6 heterojunction. The PD demonstrated a distinct photovoltaic effect and excellent photodetection performance with an ultra-low dark current and a high light-to-dark current ratio in self-powered mode. The PD also showed a stable and fast response speed under different light intensities and voltages. Overall, the Ga2O3/Bi2WO6 heterojunction has the potential to be a candidate for self-powered and high-performance UV photodetectors.
Article
Physics, Multidisciplinary
Jian-Ying Yue, Xue-Qiang Ji, Shan Li, Xiao-Hui Qi, Pei-Gang Li, Zhen-Ping Wu, Wei-Hua Tang
Summary: In this study, solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated using β-(Al0.25Ga0.75)x(2)O(3)/β-Ga2O3 film. The performance of the β-Ga2O3 detector was significantly improved after surface passivation with β-(Al0.25Ga0.75)(2)O-3.
Article
Engineering, Electrical & Electronic
Xiao-Hui Qi, Zeng Liu, Xue-Qiang Ji, Jian-Ying Yue, Yu-Song Zhi, Shan Li, Zu-Yong Yan, Yu-Feng Guo, Wei-Hua Tang
Summary: In this article, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga2O3/TiO2 planar heterojunction is fabricated using both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The PD exhibits impressive DUV sensing properties, including high responsivity (R), specific detectivity (D-*), and external quantum efficiency (EQE). The PD can operate stably in a self-powered mode and has potential for applications in energy-conserving DUV sensing systems.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Jiawei Zhang, Yixuan Cui, Chunxiao Liu, Xiangfu Wang, Weihua Tang
Summary: This paper introduces a new flexible pressure sensor designed with LIG/AgNWs composite to improve ultra-high sensitivity and stability. The dependence of sensor property on LIG/NMP concentration and coating layers was studied, and the sensor showed good sensitivity (56.9 kPa(-1)) and stable performance. Its application in bending fingers and high fives was also studied, and results demonstrate its suitability for human body dynamic posture monitoring.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Review
Physics, Applied
Zeng Liu, Weihua Tang
Summary: This article discusses the recent progress of Ga2O3-based Schottky photodiodes and provides suggestions for Schottky metal selection, interfacial barrier modulation, space electric field adjustment, energy band engineering, and improvement of photodetection performance, aiming to promote the further development of deep-ultraviolet photodetection in the near future.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Instruments & Instrumentation
Zeng Liu, Shaohui Zhang, Maolin Zhang, Junpeng Fang, Ling Du, Jian Zhang, Chang Xu, Yufeng Guo, Weihua Tang
Summary: In this paper, a Ga2O3-based pressure sensor is introduced using the technique of metalorganic chemical vapor deposition thin film growth. Although Ga2O3 is an important semiconductor material for functional electronics and optoelectronics, there has been limited research on Ga2O3-based pressure sensors. However, this study demonstrates that the fabricated Ga2O3-based pressure sensor exhibits good sensing performance for different pressures. The sensor shows an increase in current by two orders of magnitude under a pressure of 5 kPa. Additionally, the response/release times were measured under different pressures ranging from 1 to 20 kPa. This work provides a potential method for constructing smart pressure sensors based on functional Ga2O3.
SMART MATERIALS AND STRUCTURES
(2023)
Article
Physics, Applied
Shan Li, Lili Yang, Zeng Liu, Maolin Zhang, Yufeng Guo, Weihua Tang
Summary: This study reported an ultraviolet photodetector constructed on a simple vertical PEDOT:PSS/SiC hybrid heterojunction, which demonstrated superior self-powered performance. The SiC based photodetector achieved self-powered responsivity over A/W level, comparable with many reported 4H-SiC avalanche photodiodes, due to the abundant charge carrier concentration in 4H-SiC substrate and the large built-in field at PEDOT:PSS/SiC heterointerface. The fabricated PD showed high responsivity, detectivity, and external quantum efficiency, fast rise/decay time, large on-off switching ratio, high spectral rejection ratio, and long lifetime reliability.
APPLIED PHYSICS LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Xueqiang Ji, Jianying Yue, Xiaohui Qi, Zuyong Yan, Shan Li, Chao Lu, Zhitong Li, Zeng Liu, Song Qi, Xu Yan, Jinjin Wang, Shuang Wang, Peigang Li, Weihua Tang
Summary: In this study, stable and tunable electron concentration in fl-Ga2O3 homoepitaxial epitaxial films was achieved by using metal-organic chemical vapor deposition (MOCVD) on Fe-doped (010)-oriented fl-Ga2O3 substrates. The electrical properties of the films were found to vary depending on the concentration of Si ions incorporated during the growth process. The results suggest that stable and tunable electron concentration is crucial for optimizing high-power electronic devices based on fl-Ga2O3.
Article
Crystallography
Suhao Yao, Kemeng Yang, Lili Yang, Ganrong Feng, Maolin Zhang, Yufeng Guo, Weihua Tang
Summary: This study investigated the performance of beta-Ga2O3-based Schottky barrier diodes (SBDs) with floating metal rings (FMRs) using numerical simulations. The simulation parameters of beta-Ga2O3 were extracted from experimental results. The device exhibited similar forward conduction characteristics to SBDs without FMRs and its breakdown characteristics were influenced by various structural parameters. An optimized device achieved a breakdown voltage 2.5 times higher than a device without FMRs. The study also showed that the breakdown voltage with such structures can reach at least 1.5 times higher than that of a device without FMRs for general conditions.
Article
Engineering, Electrical & Electronic
Gao-Hui Shen, Zeng Liu, Mao-Lin Zhang, Yu-Feng Guo, Wei-Hua Tang
Summary: This paper introduces a 16 x 16 Ga2O3 photodetector array, in which Ga2O3 thin film was deposited on a c-sapphire substrate using metal-organic chemical vapor deposition. The array device was constructed through UV photolithography, lift-off, and electron-beam evaporation techniques. The photodetector showed good wavelength selectivity with a high rejection ratio of 8 x 10(3). It exhibited a fast response ability, with a rise time of 6 ms and a decay time of 48 ms, when excited by a laser. The dark current of the 256 pixels in the array ranged from 2 pA to 4 pA, without any disparity.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Multidisciplinary
Maolin Zhang, Wanyu Ma, Qiong Zhang, Ang Bian, Zeng Liu, Lili Yang, Shan Li, Yufeng Guo, Weihua Tang
Summary: In this study, a heterojunction photodetector combining MAPbBr3 and GaN was constructed, and its detection capabilities were examined. The results demonstrated superior performance, including high rectification ratio and photo-to-dark current ratio. Additionally, the characteristics of the photodetector and possible methods for further performance enhancements were discussed.
Article
Engineering, Multidisciplinary
Gaohui Shen, Zeng Liu, Kai Tang, Shulin Sha, Lei Li, Chee-Keong Tan, Yufeng Guo, Weihua Tang
Summary: This study introduces an 8x8 Ga2O3 solar-blind ultraviolet photodetector array with high photo-response performance and uniform responsivity, which is of great significance for developing Ga2O3-based optoelectronic device applications.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES
(2023)
Article
Materials Science, Multidisciplinary
Song Qi, Jiahang Liu, Jianying Yue, Xueqiang Ji, Jiaying Shen, Yongtao Yang, Jinjin Wang, Shan Li, Zhenping Wu, Weihua Tang
Summary: In this work, a graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector was constructed to address the issue of elevated dark currents in existing graphene/Ga2O3 devices. By taking advantage of the asymmetric structure design to suppress dark current and the transparent graphene electrode to increase carrier collection efficiency, the device achieved outstanding responsivity, detectivity, external quantum efficiency, and response time. Importantly, it exhibited low dark current and high light-to-dark ratio. Overall, the graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector has considerable potential as a deep ultraviolet detector.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Physics, Multidisciplinary
Lei Li, Yu-Song Zhi, Mao-Lin Zhang, Zeng Liu, Shao-Hui Zhang, Wan-Yu Ma, Ma Qiang, Gao-Hui Shen, Xia Wang, Yu-Feng Guo, Wei-Hua Tang
Summary: In this study, a Ga2O3/Al0.1Ga0.9N heterojunction DU PD was successfully fabricated and its photodetection performance was evaluated. The experimental results showed that the PD exhibited good photocurrent response under 254nm and 365nm DUP light illumination, and had low dark current. In addition, the operating mechanism of the dual-band dual-mode heterojunction PD was analyzed, and it was found that it could be sensitive to UVA and UVC wavelengths, expanding its photodetection range.
ACTA PHYSICA SINICA
(2023)
