Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio

标题
Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 94, Issue 1, Pages 013512
出版商
AIP Publishing
发表日期
2009-01-10
DOI
10.1063/1.3064130

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