☆ 4.6 Article

Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

IEEE ELECTRON DEVICE LETTERS (2013)

期刊

IEEE ELECTRON DEVICE LETTERS

卷 34, 期 8, 页码 1011-1013

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/LED.2013.2268151

关键词

In-Ga-Zn-O; nonvolatile memory; Pt nanocrystals (NCs); thin-film transistor (TFT); ultraviolet (UV)

类别

Engineering, Electrical & Electronic

资金

National Science Foundation of China [61274088, 61076076, NCET-08-0127]

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Protocol

Reagent

摘要

Semiconducting amorphous indium-gallium-zinc oxide (a-IGZO) films are integrated with an Al2O3/Pt-nanocrystals/ Al2O3 gate-stack to form UV-erasable thin-film transistor (TFT) memory. The threshold voltage (V-th), sub-threshold swing, I-ON/I-OFF ratio, and effective electron mobility of the fabricated devices are 2.1 V, 0.39 V/decade, similar to 10(6), and 8.4 cm(2)/V.s, respectively. A positive V-th shift of 2.25 V is achieved after 1-ms programming at 10 V-th, whereas a negative V-th shift as large as 3.48 V is attained after 5-s UV erasing. In addition, a 10-year memory window of 2.56 V is extrapolated at room temperature. This high-performance a-IGZO TFT memory is suitable for optical touch-panel applications.

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