High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium–Gallium–Zinc–Oxide Thin-Film Transistor

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

(2011) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

(2010) Sung-Min Yoon et al.   APPLIED PHYSICS LETTERS

ZnO single nanowire-based UV detectors

(2010) Sachindra Nath Das et al.   APPLIED PHYSICS LETTERS

Low Temperature Annealing with Solid-State Laser or UV Lamp Irradiation on Amorphous IGZO Thin-Film Transistors

(2010) Hsiao-Wen Zan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs

(2010) Young-Su Park et al.   IEEE ELECTRON DEVICE LETTERS

A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

(2010) Nai-Chao Su et al.   IEEE ELECTRON DEVICE LETTERS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

(2009) Arun Suresh et al.   APPLIED PHYSICS LETTERS

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS