期刊
APPLIED PHYSICS LETTERS
卷 93, 期 14, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2996260
关键词
-
资金
- Electronic and Optoelectronic Research Laboratories, Industrial Technology Research Institute (EOL/ITRI)
- National Science Council of Taiwan [972221-E-005-026]
In this letter, an organic nonvolatile thin film transistor (TFT) memory on a plastic substrate is reported. The cross-linked poly-4-vinyl phenol (PVP) is used as a polymer dielectric layer in the form of a triple layer structure to achieve the memory function. Two interfaces between the PVP triple layers are the main trapping centers for electrons and holes, respectively, which are verified by the capacitance-voltage analysis. The electric dipole is established by the separated electrons and holes in the two interfaces of the PVP triple layer structure and results in an 11 V memory window for the TFT nonvolatile memory. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2996260]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据