Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

标题
Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 93, Issue 17, Pages 172109
出版商
AIP Publishing
发表日期
2008-10-31
DOI
10.1063/1.3012386

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