Carrier Type Control of WSe2Field-Effect Transistors by Thickness Modulation and MoO3Layer Doping

Interfacial Nondegenerate Doping of MoS2 and Other Two-Dimensional Semiconductors

(2015) Sanjay Behura et al.   ACS Nano

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors

(2015) Hema C. P. Movva et al.   ACS Nano

Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane

(2015) Dong-Ho Kang et al.   ACS Nano

Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

(2015) Francisco M. Espinosa et al.   APPLIED PHYSICS LETTERS

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

(2015) Gui-Bin Liu et al.   CHEMICAL SOCIETY REVIEWS

Functionalization of Transition Metal Dichalcogenides with Metallic Nanoparticles: Implications for Doping and Gas-Sensing

(2015) Deblina Sarkar et al.   NANO LETTERS

A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy

(2015) Ya Yi et al.   Nanoscale

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

(2015) Changjian Zhou et al.   Nanoscale

Infrared light gated MoS_2 field effect transistor

(2015) Huajing Fang et al.   OPTICS EXPRESS

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

(2015) Q. Cao et al.   SCIENCE

High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

(2015) David J. Perello et al.   Nature Communications

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

(2015) Du Xiang et al.   Nature Communications

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

(2015) N. R. Pradhan et al.   Scientific Reports

Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets

(2014) Hai Li et al.   ACCOUNTS OF CHEMICAL RESEARCH

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

(2014) Yuchen Du et al.   ACS Nano

Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments

(2014) Stephen McDonnell et al.   ACS Nano

Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe2 Observed by Resonant Raman Spectroscopy

(2014) Elena del Corro et al.   ACS Nano

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

p-type doping of MoS2 thin films using Nb

(2014) Masihhur R. Laskar et al.   APPLIED PHYSICS LETTERS

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

(2014) Daisuke Kiriya et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

(2014) Joonki Suh et al.   NANO LETTERS

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

(2014) Lingming Yang et al.   NANO LETTERS

VLSI-Compatible Carbon Nanotube Doping Technique with Low Work-Function Metal Oxides

(2014) Luckshitha Suriyasena Liyanage et al.   NANO LETTERS

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Dependence of the electronic and transport properties ofmetal-MoSe2interfaces on contact structures

(2014) Deniz Çakır et al.   PHYSICAL REVIEW B

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

(2014) Kevin Chen et al.   APL Materials

Carrier Control of MoS2 Nanoflakes by Functional Self-Assembled Monolayers

(2013) Yang Li et al.   ACS Nano

Layer-by-Layer Thinning of MoS2 by Plasma

(2013) Yulu Liu et al.   ACS Nano

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

(2013) Cheng Gong et al.   APPLIED PHYSICS LETTERS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Controlled, Defect-Guided, Metal-Nanoparticle Incorporation onto MoS2 via Chemical and Microwave Routes: Electrical, Thermal, and Structural Properties

(2013) T. S. Sreeprasad et al.   NANO LETTERS

Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

(2013) Hui Fang et al.   NANO LETTERS

Layer-by-layer thinning of MoS2by thermal annealing

(2013) Xin Lu et al.   Nanoscale

Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate

(2013) Kapildeb Dolui et al.   PHYSICAL REVIEW B

Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

(2013) H. Sahin et al.   PHYSICAL REVIEW B

Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces

(2013) Mark T Greiner et al.   NPG Asia Materials

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

(2013) Hualing Zeng et al.   Scientific Reports

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

(2012) Weijie Zhao et al.   ACS Nano

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

(2012) A. Kumar et al.   EUROPEAN PHYSICAL JOURNAL B

Strong and Stable Doping of Carbon Nanotubes and Graphene by MoOx for Transparent Electrodes

(2012) Sondra L. Hellstrom et al.   NANO LETTERS

Laser-Thinning of MoS2: On Demand Generation of a Single-Layer Semiconductor

(2012) A. Castellanos-Gomez et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

(2011) Yang Chai et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Quantifying ion-induced defects and Raman relaxation length in graphene

(2010) M.M. Lucchese et al.   CARBON

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

(2010) Fengnian Xia et al.   NANO LETTERS

Bandgap opening in graphene induced by patterned hydrogen adsorption

(2010) Richard Balog et al.   NATURE MATERIALS

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Direct observation of a widely tunable bandgap in bilayer graphene

(2009) Yuanbo Zhang et al.   NATURE

Current saturation in zero-bandgap, top-gated graphene field-effect transistors

(2008) Inanc Meric et al.   Nature Nanotechnology

Doping Graphene with Metal Contacts

(2008) G. Giovannetti et al.   PHYSICAL REVIEW LETTERS