Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

标题
Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors
作者
关键词
-
出版物
EUROPEAN PHYSICAL JOURNAL B
Volume 85, Issue 6, Pages -
出版商
Springer Nature
发表日期
2012-07-17
DOI
10.1140/epjb/e2012-30070-x

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