A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy
出版年份 2015 全文链接
标题
A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy
作者
关键词
-
出版物
Nanoscale
Volume 7, Issue 38, Pages 15711-15718
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-08-24
DOI
10.1039/c5nr04592d
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