Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

标题
Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 10, Pages 103503
出版商
AIP Publishing
发表日期
2015-03-12
DOI
10.1063/1.4914349

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