Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

标题
Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density
作者
关键词
-
出版物
APL Materials
Volume 2, Issue 9, Pages 092504
出版商
AIP Publishing
发表日期
2014-08-06
DOI
10.1063/1.4891824

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