Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition

Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

(2013) G. K. Dalapati et al.   ACS Applied Materials & Interfaces

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

(2013) Varistha Chobpattana et al.   APPLIED PHYSICS LETTERS

Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing

(2013) Wipakorn Jevasuwan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

(2013) Varistha Chobpattana et al.   JOURNAL OF APPLIED PHYSICS

Defect energy levels of the As–As dimer at InGaAs/oxide interfaces: A first principles study

(2013) Giacomo Miceli et al.   MICROELECTRONIC ENGINEERING

Electronic structure of lanthanide oxide high K gate oxides

(2013) R. Gillen et al.   MICROELECTRONIC ENGINEERING

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

(2012) S. McDonnell et al.   APPLIED PHYSICS LETTERS

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

(2012) C. Mahata et al.   APPLIED PHYSICS LETTERS

In situ surface pre-treatment study of GaAs and In0.53Ga0.47As

(2012) B. Brennan et al.   APPLIED PHYSICS LETTERS

A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

(2012) Yu Yuan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

(2012) Takuya Hoshii et al.   JOURNAL OF APPLIED PHYSICS

Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals

(2012) Hannu-Pekka Komsa et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

(2012) Wipakorn Jevasuwan et al.   Materials

Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

(2011) Andrew D. Carter et al.   Applied Physics Express

Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces

(2011) Alireza Alian et al.   APPLIED PHYSICS LETTERS

Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

(2011) M. Tallarida et al.   APPLIED PHYSICS LETTERS

Defect states at III-V semiconductor oxide interfaces

(2011) L. Lin et al.   APPLIED PHYSICS LETTERS

Bonding principles of passivation mechanism at III-V-oxide interfaces

(2011) J. Robertson et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

(2011) C.L. Hinkle et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

(2011) Yu Yuan et al.   IEEE ELECTRON DEVICE LETTERS

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

(2011) É. O’Connor et al.   JOURNAL OF APPLIED PHYSICS

First-Principles Modeling of the “Clean-Up” of Native Oxides during Atomic Layer Deposition onto III–V Substrates

(2011) Sylwia Klejna et al.   Journal of Physical Chemistry C

Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric

(2011) Muhammad Adi Negara et al.   MICROELECTRONIC ENGINEERING

Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?

(2011) W. Wang et al.   MICROELECTRONIC ENGINEERING

Defect gap states on III–V semiconductor–oxide interfaces (invited)

(2011) J. Robertson et al.   MICROELECTRONIC ENGINEERING

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

(2010) Rahul Suri et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O

(2010) Christoph Adelmann et al.   CHEMICAL VAPOR DEPOSITION

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

(2010) Jonathon B. Clemens et al.   JOURNAL OF CHEMICAL PHYSICS

Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

(2010) Weichao Wang et al.   Journal of Physical Chemistry C

ALD and Parasitic Growth Characteristics of the Tetrakisethylmethylamino Hafnium (TEMAH)/H[sub 2]O Process

(2010) L. Nyns et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

(2010) Jian Shen et al.   SURFACE SCIENCE

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface

(2009) M. Scarrozza et al.   APPLIED PHYSICS LETTERS

A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

(2009) Feng Zhu et al.   APPLIED PHYSICS LETTERS

Reduction of native oxides on GaAs during atomic layer growth of Al2O3

(2009) Hang Dong Lee et al.   APPLIED PHYSICS LETTERS

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

Challenges of integration of high-κ dielectric with III–V materials (Invited Paper)

(2009) W. Tsai et al.   MICROELECTRONIC ENGINEERING

On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

(2009) Tzu-Pin Chen et al.   SOLID-STATE ELECTRONICS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

(2008) Annelies Delabie et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY