Rare-metal-free high-performance Ga-Sn-O thin film transistor

Anomalous Increase in Field-Effect Mobility in In–Ga–Zn–O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer

(2016) Daichi Koretomo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors

(2016) Mamoru Furuta et al.   ECS Journal of Solid State Science and Technology

Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 $\mathrm{cm}^{2}$ /Vs

(2015) Kyung-Chul Ok et al.   IEEE ELECTRON DEVICE LETTERS

Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance

(2015) Tokiyoshi Matsuda et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Evaluation of damage in InGaZnO4induced by plasma using electron spin resonance measurement

(2014) Tokiyoshi Matsuda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Thermally enhanced threshold voltage shifts in amorphous In–Ga–Zn–O thin-film transistor

(2014) Takashi Kojiri et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress

(2014) Yoshihiro Ueoka et al.   ECS Journal of Solid State Science and Technology

Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory

(2013) Charlene Chen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer

(2013) Shigekazu Tomai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Highly Reliable Polysilsesquioxane Passivation Layer fora-InGaZnO Thin-Film Transistors

(2013) Juan Paolo Bermundo et al.   ECS Journal of Solid State Science and Technology

Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

(2013) Rudolf C. Hoffmann et al.   Journal of Materials Chemistry C

High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

(2012) Kazuaki Ebata et al.   Applied Physics Express

Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

(2012) Jaeyeong Heo et al.   APPLIED PHYSICS LETTERS

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

(2011) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO Films

(2011) Mutsumi Kimura et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-mobility oxide TFT for circuit integration of AMOLEDs

(2011) Eri Fukumoto et al.   Journal of the Society for Information Display

Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor

(2011) Jun-Young Huh et al.   THIN SOLID FILMS

Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layers

(2011) Kenji Nomura et al.   THIN SOLID FILMS

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

(2010) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory

(2010) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Material characteristics and applications of transparent amorphous oxide semiconductors

(2010) Toshio Kamiya et al.   NPG Asia Materials

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

(2009) Kwang-Hee Lee et al.   APPLIED PHYSICS LETTERS

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

(2009) Arun Suresh et al.   APPLIED PHYSICS LETTERS

Crystallinity and resistivity of ZnO thin films with indium implantation and postannealing

(2009) Tokiyoshi Matsuda et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A