Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

标题
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 99, Issue 5, Pages 053505
出版商
AIP Publishing
发表日期
2011-08-06
DOI
10.1063/1.3622121

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