Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

标题
Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 96, Issue 26, Pages 262105
出版商
AIP Publishing
发表日期
2010-06-30
DOI
10.1063/1.3455072

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started