期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 1, 页码 38-40出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2365614
关键词
High mobility; illumination; reactive sputtering; reliability; transistors; zinc oxynitride
资金
- National Research Foundation of Korea [2012011730]
- Ministry of Science, ICT and Future Planning [10041416]
High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a de reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (similar to 100 mTorr, air ambient) at 250 degrees C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (mu(sat)) of >50 cm(2)Ns, a threshold voltage (Vth) of 2.5 V, and an ON OFF drain current ratio of >10(8). In addition, photoinduced bias reliability under a gate bias stress (V-G = 20 V) was significantly improved from -10.88 V (1 h) to -2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N Zn O states.
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