Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors
出版年份 2013 全文链接
标题
Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors
作者
关键词
-
出版物
Scientific Reports
Volume 3, Issue 1, Pages -
出版商
Springer Nature
发表日期
2013-09-24
DOI
10.1038/srep02737
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- (2011) Ji-In Kim et al. APPLIED PHYSICS LETTERS
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- (2011) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
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- (2010) A. Tsukazaki et al. NATURE MATERIALS
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- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
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- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
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- (2008) A. Suresh et al. APPLIED PHYSICS LETTERS
- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
- Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
- (2008) N. Huby et al. APPLIED PHYSICS LETTERS
- High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors
- (2008) E. Fortunato et al. SOLID-STATE ELECTRONICS
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