Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

(2012) Daniel J. Denninghoff et al.   IEEE ELECTRON DEVICE LETTERS

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz

(2012) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Polarization engineered 1-dimensional electron gas arrays

(2012) Digbijoy N. Nath et al.   JOURNAL OF APPLIED PHYSICS

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

(2010) Zhiming M. Wang et al.   PHYSICS LETTERS A

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS