Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

标题
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
作者
关键词
-
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 15, Pages 3817-3823
出版商
Elsevier BV
发表日期
2009-06-03
DOI
10.1016/j.jcrysgro.2009.02.051

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