Article
Crystallography
Xu-Qiang Shen, Kazutoshi Kojima
Summary: AlN films were grown on c-plane sapphire substrates by AFHT-MOCVD, and the effects of source gas flow rate and growth temperature on the AlN growth rate were studied. The maximum growth rate achieved was approximately 4.0 μm/hour. Possible mechanisms for gas reactions in the AFHT-MOCVD growth process were qualitatively discussed based on experimental results. The as-grown AlN films were characterized using HRXRD, SEM, and STEM, and exhibited narrow FWHM values for symmetric and asymmetric AlN diffractions, indicating the potential for high-quality growth using this technique.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Physics, Multidisciplinary
Asim Mantarci
Summary: The study coated In0.4Ga0.6N thin films on GaN/p-Si substrates using radio frequency magnetron sputter under different power levels, and found significant changes in crystal structure and physical parameters corresponding to the applied power values. Different behaviors were observed in optical bandgap, texture coefficient, and optical conductivity of the films under various power levels.
CHINESE JOURNAL OF PHYSICS
(2022)
Article
Crystallography
C. R. Tait, S. R. Lee, J. Deitz, M. A. Rodriguez, D. L. Alliman, B. P. Gunning, G. M. Peake, A. Sandoval, N. R. Valdez, P. R. Sharps
Summary: Progress has been made in the synthesis of semimetal Cd3As2 by metal-organic chemical-vapor deposition (MOCVD), with optimized growth conditions revealing that InAs-terminated substrates yield the most desirable results. Advanced imaging techniques and x-ray diffraction modalities have been utilized to extensively study the microstructure of Cd3As2 thin films, showing smooth and specular surfaces with low roughness. The films exhibit strain relaxation and belong to the P4(2)/nbc space group, positioning MOCVD-grown Cd3As2 as a Dirac semimetal of interest for topological quantum materials research.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Materials Science, Multidisciplinary
Siddharth Rana, Shang-Jui Chiu, Chih-Yang Huang, Fu-Gow Tairtan, Yan-Gu Lin, Dong-Sing Wuu, Jitendra Pratap Singh, Guang-Cheng Su, Po-Liang Liu, Ray-Hua Horng
Summary: In this study, a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure was fabricated. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD). The sensitivity and performance of the DXPD were tested using synchrotron hard X-ray source, and the results showed that ZnGa2O4-based DXPD had significantly higher sensitivity and potential for use in high-performance hard XPDs.
MATERIALS TODAY ADVANCES
(2023)
Article
Crystallography
Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Russell D. Dupuis
Summary: This study aims to investigate the unintentional impurity incorporation in GaN epitaxial layers and optimize the growth conditions to reduce background impurity concentrations. The results show that the unintentional incorporation of carbon and silicon impurities is highly dependent on the growth parameters. The use of TEG precursor can reduce the carbon concentration, while the lowest concentration can be achieved with TMG precursor under optimized conditions. Similarly, the lowest background silicon concentration can be achieved with TMG precursor under specific conditions.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Materials Science, Multidisciplinary
Ray-Hua Horng, Apoorva Sood, Siddharth Rana, Niall Tumity, Fu-Gow Tarntair, Catherine Langpoklakpam, Hao-Chung Kuo, Jitendra Pratap Singh
Summary: Conductive β-Ga2O3 epilayers grown on the sapphire substrate using MOCVD were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si-implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport properties of different MISD with different distance between cathode and anode contact were investigated.
MATERIALS TODAY ADVANCES
(2023)
Article
Crystallography
Philip Chan, Caroline E. Reilly, Stacia Keller, Steven P. DenBaars, Shuji Nakamura
Summary: Semipolar InN quantum dash growth on GaN by metalorganic chemical vapor deposition was studied regarding growth time and temperature. Room temperature photoluminescence was observed with peak emission wavelengths ranging from 1350 to 1500 nm. The emission intensity and wavelength were found to be sensitive to the growth temperature and time of the GaN capping layer.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Materials Science, Multidisciplinary
Asim Mantarci
Summary: In this study, the optical properties, crystal structure, chemical composition, and physical properties of In0.6628Ga0.3372N thin films were investigated under varying powers. It was found that increasing power led to larger crystallite sizes and higher refractive index values for the thin films.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2021)
Article
Materials Science, Multidisciplinary
Ray-Hua Horng, Dong-Sing Wuu, Po-Liang Liu, Apoorva Sood, Fu-Gow Tarntair, Yu-Hsuan Chen, Singh Jitendra Pratap, Ching -Lien Hsiao
Summary: In this study, monoclinic gallium oxide (beta-Ga2O3) epilayer was successfully grown on a sapphire substrate by MOCVD. Controlling the growth temperature, TEGa flow rate, and growth time improved the crystallization characteristics of the epilayers. However, it also increased the surface roughness of beta-Ga2O3 film. The growth mechanism and chemical reactions between TEGa and oxygen precursors were analyzed.
MATERIALS TODAY ADVANCES
(2022)
Article
Nanoscience & Nanotechnology
A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Summary: Single alpha-phase (AlxGa1-x)(2)O-3 thin films were successfully grown on m-plane sapphire substrates via metalorganic chemical vapor deposition, demonstrating high quality and uniformity. The influence of growth parameters on film properties was further investigated. X-ray photoelectron spectroscopy was employed to characterize the aluminum content and bandgaps, with the band alignment at heterojunctions also studied.
Article
Materials Science, Multidisciplinary
Zhe Chuan Feng, Hao-Hsiung Lin, Bin Xin, Shi-Jane Tsai, Vishal Saravade, Jeffrey Yiin, Benjamin Klein, Ian T. Ferguson
Summary: The hetero-epitaxy of 3C-SiC on Si-face and C-face 4H-SiC was experimentally investigated, and a corresponding growth model was identified. This study provides valuable insights for band-gap engineering and various applications of SiC.
Article
Crystallography
Abheek Bardhan, Srinivasan Raghavan
Summary: The constraints of increasing AlN content in active AlGaN device layers on Si substrates for AlGaN-channel HEMTs and UV applications are explored, with compositions containing up to 30% AlN fraction achieved through optimization of growth conditions. Minimizing stress relaxation during growth while maintaining a smooth growth front can allow for higher AlN fraction containing epitaxial layers.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Materials Science, Multidisciplinary
Randy Burns, Siphelo Ngqoloda, Christopher J. Arendse, Barbara Lavina, Ashutosh Dahal, Deepak K. Singh, Suchismita Guha
Summary: The study successfully grew methylammonium lead iodide films using chemical vapor deposition, increasing air stability and inducing stable cubic phase formation. The samples maintained the cubic phase at pressures as low as 0.25 GPa. X-ray diffraction studies showed that the CVD-grown MAPbI3 crystals remained in the cubic phase between 0.25 and 3.0 GPa.
JOURNAL OF MATERIALS RESEARCH
(2021)
Article
Chemistry, Physical
Naoto Kumagai, Hirotomo Itagaki, Jaeho Kim, Shingo Hirose, Hajime Sakakita, Xue-lun Wang
Summary: In this study, the application of plasma-induced MOCVD for epitaxial growth of III-V nitride semiconductors was examined. The GaN surface exposed to NH3 plasma was characterized using physical and chemical techniques. The comprehensive characterizations revealed that plasma exposure for several minutes did not cause significant damage to the GaN surface, and optical techniques showed higher sensitivity in detecting the effect of plasma exposure.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Pojung Lin, Jiazhe Liu, Hongche Lin, Zhiyuan Chuang, Wenching Hsu, Yiche Chen, Poliang Liu, Rayhua Horng
Summary: In this study, GaN-based epitaxial structures were grown on high-resistivity silicon (HRSi) substrates by met-alorganic chemical vapor deposition. The p-type parasitic channels generated at the interfaces of the aluminum nitride (AlN) nucleation layers and HRSi substrates were characterized. A 2-nm thick silicon nitride (SiNx) layer was used to suppress the Al diffusion and prevent the generation of p-type parasitic channels. The insertion loss of the optimized structure was only 0.04 dB/mm higher than that of the annealed HRSi substrate at 10 GHz.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Wen Chen, Meixin Feng, Yongjun Tang, Jian Wang, Jianxun Liu, Qian Sun, Xumin Gao, Yongjin Wang, Hui Yang
Summary: GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) were successfully fabricated through wafer bonding and Si substrate removal. The double-sided dielectric distributed Bragg reflectors formed a high-quality optical resonant cavity, showing good spectral characteristics. High data transmission rates and low-cost emitters make them advantageous for future visible light communications.
Article
Engineering, Electrical & Electronic
Fuping Huang, Zhizhong Wang, Chunshuang Chu, Qianqian Liu, Yongjian Li, Zhen Xin, Yonghui Zhang, Qian Sun, Zi-Hui Zhang
Summary: In this study, we conducted systematic studies on the interfacial conditions for Gallium Nitride-based trench Metal/Insulator/Semiconductor (MIS) type Barrier Schottky Rectifier using T-CAD tool. Our findings suggest that donor-type traps reduce the Schottky barrier height, resulting in increased leakage current and reduced breakdown voltage. On the other hand, acceptor-type traps at the contact interface and mesa sidewall increase the barrier height and turn-on voltage. We propose using an MIS structure with a 1-nm Al2O3 insulation layer to solve the complicated interfacial conditions and reduce reverse leakage significantly.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Dong Su Kim, Ji Hoon Choi, Nishad G. G. Deshpande, Hak Hyeon Lee, Kun Woong Lee, Shin Young Oh, Hyung Koun Cho
Summary: This study investigates the hydration enthalpy difference of cations in an aqueous solution for the chemical self-oxidation process. It demonstrates the synthesis of Cu(OH)(x) nanowires photocathode through alkali cation-engineered chemical self-oxidation, which exhibits high purity and superior photoelectrochemical performance.
Article
Chemistry, Physical
Cheol Hyoun Ahn, Jeong Jae Kim, Won Seok Yang, Hyung Koun Cho
Summary: Composite synthesis with inorganic fillers is proposed to obtain solid-state electrolytes with high ionic conductivity and long-term stability. Biomolecule-based metal-organic frameworks (bio-MOFs) are introduced as efficient active fillers with abundant functional groups. The bio-MOF fillers show good distribution in the polymer electrolyte matrix, leading to enhanced electrochemical performance.
JOURNAL OF POWER SOURCES
(2023)
Article
Chemistry, Multidisciplinary
Sung Hyeon Jung, Ji Sook Yang, Hyung Koun Cho
Summary: In this study, a symmetric bidirectional transistors (SBT) is proposed, which combines the mechanisms of metal-oxide semiconductor field-effect transistor and TFT in different bias directions. The SBT device shows excellent on-current and midregion off-current, similar to ideal ambipolar transistors. Due to its multilevel signals and inverter behaviors, the SBT device is suitable for use in complementary-metal-oxide-semiconductors and logic memories.
MATERIALS HORIZONS
(2023)
Article
Materials Science, Multidisciplinary
Hak Hyeon Lee, Dong Su Kim, Swagotom Sarker, Ji Hoon Choi, Ho Seong Lee, Hyung Koun Cho
Summary: Surface-limited cation exchange and electrochemical activation processes can significantly enhance the mass activity of Rh catalysts. Rh atoms on the surface of NiOOH electrodes were replaced by cation exchange and activated by electrochemical reduction process. The resulting Rh catalysts exhibited small particle sizes without agglomeration, indicating a decrease in inactive inner Rh atoms. This surface-limited cation exchange process is an effective method for reducing inactive atoms of expensive noble metal catalysts.
ENERGY & ENVIRONMENTAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Shumeng Yan, Yu Zhou, Jianxun Liu, Yaozong Zhong, Xiujian Sun, Xin Chen, Xiaolu Guo, Qian Li, Qian Sun, Hui Yang
Summary: The influence of energy band structure on the electrical characteristics of GaN-based DHBTs was studied through simulation and fabrication. A novel DHBT structure with a composition graded base was grown and fabricated, achieving a long minority carrier lifetime of 4.08 ns. The elimination of the energy barrier at the conventional GaN/InGaN/GaN B-C junction interface was proposed by combining indium composition grading of the p-InGaN base layer and Si doping profile tuning for the collector layer. The as-fabricated DHBT presented a high intercept voltage of 225 V and a high current gain of 49.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Ji Sook Yang, Sung Hyeon Jung, Cheol Hyoun Ahn, Won Seok Yang, Jeong Jae Kim, Hyung Koun Cho
Summary: Hybrid InGaZnO (IGZO) phototransistors (Ph-TRs) with zeolitic-imidazolate-framework-67 (ZIF-67) as a photoabsorber demonstrate wide photodetection range, fast response/recovery speed, and high stability without additional gate bias. ZIF-67 absorbs visible light and transfers photoexcited electrons to the IGZO conduction band through a metal-to-metal charge transfer pathway, resulting in significant changes in photocurrent. The fast rise/fall time and repeatable photo-sensing performance under pulsed light-on/off cycles make it promising for real-time detection even at high frequencies.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Juntong Chen, Jianxun Liu, Yingnan Huang, Ruisen Liu, Yayu Dai, Leming Tang, Zheng Chen, Xiujian Sun, Chenshu Liu, Shuming Zhang, Qian Sun, Meixin Feng, Qiming Xu, Hui Yang
Summary: Heteroepitaxial growth of high Al-content AlGaN often leads to threading dislocations and surface hexagonal hillocks, which degrade the performance and reliability of AlGaN-based UVC LEDs. This study investigates the degradation mechanism and impurity/defect behavior of UVC LEDs in relation to the hexagonal hillocks. Electron leakage is found to be the main cause of early degradation in UVC LEDs. The role of hillock edges in electron leakage is confirmed by transmission electron microscopy measurements, time-of-flight secondary ion mass spectrometry, and conductive atomic force microscopy. Dislocations bunching and segregation of impurities at the hillock edges facilitate trap-assisted carrier tunneling and recombination in the p-AlGaN. This work provides insights into a possible degradation mechanism of AlGaN-based UVC LEDs.
Article
Chemistry, Multidisciplinary
Swagotom Sarker, Ji Hoon Choi, Hak Hyeon Lee, Dong Su Kim, Hyung Koun Cho
Summary: The sluggish oxygen evolution reaction and corrosive chlorine oxidation reaction limit the applications of abundant seawater in electrochemical energy conversion. Therefore, it is essential to develop an efficient anodic reaction alternative suitable for coupling with the cathodic counterpart. The hydrazine oxidation reaction (HzOR) offers a unique pathway to overcome these challenges due to its low thermodynamic oxidation potential.
Article
Chemistry, Multidisciplinary
Wenbo Li, Leming Tang, Yong Yang, Zhicong Zhang, Guanghui Li, Meixin Feng, Qiming Xu, Qian Sun
Summary: In this study, thin-fluorine-resin-film-packaged deep-ultraviolet light-emitting diodes (DUV LEDs) were fabricated by the drip-coating method and tested for their characteristics. The results showed that the light output power increased from 4.95 mW to 5.44 mW at 40 mA, and the cost of fluorine resin could be reduced to about 10%. Furthermore, no degradation was observed during aging. However, >10% decay was observed after aging for 1000 h when the light output power reached 12 mW or higher. In conclusion, thin-fluorine-resin-film-packaged DUV LEDs can achieve a 10% enhancement in light output power by using less fluorine resin material, and the material is more applicable to low-power DUV LEDs.
APPLIED SCIENCES-BASEL
(2023)
Article
Crystallography
Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Hongwei Gao, Meixin Feng, Yu Zhou, Hui Yang
Summary: We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN on stripe-patterned Si(111) substrates with various trench widths. By narrowing down the trench and ridge widths of patterned Si substrates, crack-free, 6-micrometer-thick, high-quality AlN films on Si substrates were produced. This work paves the way for the fabrication of high-performance Al(Ga)N-based thin-film devices on Si.
Article
Chemistry, Multidisciplinary
Cheol Hyoun Ahn, Won Seok Yang, Jeong Jae Kim, Hyung Koun Cho
Summary: This study proposes a new synthesis design approach to control the DP-TiO2@NC architecture, derived from a two-step pyrolysis process, for developing electrodes that meet the requirements of high capacity and high rate capability. By tuning the configuration of mixed ligands, the electronic conductivity of the carbon frameworks can be enhanced, resulting in improved battery performance.
ACS SUSTAINABLE CHEMISTRY & ENGINEERING
(2023)
Article
Chemistry, Multidisciplinary
Dong Su Kim, Hee Won Suh, Sung Woon Cho, Shin Young Oh, Hak Hyeon Lee, Kun Woong Lee, Ji Hoon Choi, Hyung Koun Cho
Summary: This paper proposes an electrochemical design for improving the reliability of analog switching in RRAM-based neuromorphic computing by adding a sublayer of ultrafine Cu nanoparticles (U-Cu NPs) to the active Cu2O layer.
MATERIALS HORIZONS
(2023)
Review
Multidisciplinary Sciences
Yaozong Zhong, Jinwei Zhang, Shan Wu, Lifang Jia, Xuelin Yang, Yang Liu, Yun Zhang, Qian Sun
Summary: The past decades have seen significant development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of GaN-on-Si power device technology. The comprehensive review discusses crucial issues in device technology such as stress control, point defects, and device fabrication. The article also looks into device reliability and other common fabrication issues in GaN HEMTs. Lastly, it gives an outlook on the future developments of GaN-on-Si power devices in high frequency and high power ICs, and vertical power devices.
FUNDAMENTAL RESEARCH
(2022)
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)