期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 28, 期 7, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0268-1242/28/7/074006
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资金
- Microsystems Technlogy Office of the Defense Advanced Research Project Agency (DARPA) through the Nitride Electronics NeXt-Generation Technology (NEXT) program
- National Science Foundation (NSF)
In this paper, we report the recent progress in the high-frequency performance of enhancement-mode devices in the novel N-polar GaN technology and provide a pathway for further scaling. The intrinsic advantages of electron confinement, polarization doping of the back-barrier and the absence of a source barrier in N-polar GaN technology were leveraged with polarization engineering with a top barrier for enhancement mode operation and advanced self-aligned source/drain technology for low parasitic access resistances. The scalability of the device structures are explored in terms of short-channel effects and high-frequency performance. Low-field electron mobility in vertically scaled channel was also investigated providing insights on the scattering mechanism.
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