期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 248, 期 3, 页码 600-604出版社
WILEY-BLACKWELL
DOI: 10.1002/pssb.201046334
关键词
GaInN; metal-organic vapor phase epitaxy; photoluminescence; quantum wells; X-ray diffraction
资金
- DFG
- ERA-SPOT
- Braunschweig International Graduate School of Metrology (IGSM)
GaInN/GaN multiple quantum well structures grown on polar and nonpolar surfaces have been compared with respect to the indium incorporation efficiency in the quantum wells (QWs). Under the same growth conditions X-ray diffraction measurements reveal similar growth rates and In concentrations for c-plane, a-plane, and m-plane with In contents up to 40%. These results are in good agreement with optical experiments, in particular for homoepitaxial growth. However, there is strong evidence that the optical properties of the nonpolar heteroepitaxial GaInN QWs are dominated by the high density of stacking faults in those samples. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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