Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN

(2011) Sameer Chhajed et al.   APPLIED PHYSICS LETTERS

Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

(2011) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

(2011) T. Detchprohm et al.   APPLIED PHYSICS LETTERS

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

(2011) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Built-in field control in alloyedc-plane III-N quantum dots and wells

(2011) M. A. Caro et al.   JOURNAL OF APPLIED PHYSICS

Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes

(2011) H. M. Lu et al.   JOURNAL OF APPLIED PHYSICS

Impact of strain on deep ultraviolet nitride laser and light-emitting diodes

(2011) T. K. Sharma et al.   JOURNAL OF APPLIED PHYSICS

Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

(2011) G. R. Mutta et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

(2011) Xiao-Hang Li et al.   IEEE Photonics Journal

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

(2011) Guangyu Liu et al.   Nanoscale Research Letters

Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes

(2010) Chia-Lung Tsai et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field

(2010) C. R. Hall et al.   APPLIED PHYSICS LETTERS

Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers

(2010) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

(2010) W. W. Chow et al.   APPLIED PHYSICS LETTERS

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

(2010) Hee Jin Kim et al.   APPLIED PHYSICS LETTERS

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

(2010) T. Li et al.   APPLIED PHYSICS LETTERS

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

(2010) Tim Kolbe et al.   APPLIED PHYSICS LETTERS

Design Strategies for InGaN-Based Green Lasers

(2010) Anusha Venkatachalam et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

(2010) Chih-Teng Liao et al.   JOURNAL OF APPLIED PHYSICS

Optical gain characteristics of staggered InGaN quantum wells lasers

(2010) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Optical properties of type-II InGaN/GaAsN/GaN quantum wells

(2010) Seoung-Hwan Park et al.   OPTICAL AND QUANTUM ELECTRONICS

Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

(2010) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

(2010) Mingwei Zhu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field

(2009) Ziwen Yang et al.   APPLIED PHYSICS LETTERS

Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

(2009) R. Dahal et al.   APPLIED PHYSICS LETTERS

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

500 nm electrically driven InGaN based laser diodes

(2009) Désirée Queren et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency

(2009) Taeil Jung et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics

(2009) K. Okamoto et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

(2009) H.P. Zhao et al.   IET Optoelectronics

Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

(2009) Yuh-Renn Wu et al.   JOURNAL OF APPLIED PHYSICS

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

(2009) Jonathan J. Wierer et al.   Nature Photonics

Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Green light-emitting diodes with p-InGaN:Mg grown onc-plane sapphire and GaN substrates

(2009) J. P. Liu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

(2008) K. McGroddy et al.   APPLIED PHYSICS LETTERS

Thermoelectric properties of InxGa1−xN alloys

(2008) B. N. Pantha et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers

(2008) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons

(2008) John Henson et al.   JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS

Improvement in piezoelectric effect of violet InGaN laser diodes

(2008) Sheng-Horng Yen et al.   OPTICS COMMUNICATIONS