Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

Solid-State Lighting

(2011) Colin J. Humphreys   MRS BULLETIN

Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes

(2008) Hisashi Yamada et al.   Applied Physics Express

Electrowetting-enhanced microfluidic device for drop generation

(2008) Hao Gu et al.   APPLIED PHYSICS LETTERS

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS

Dichromatic color tuning with InGaN-based light-emitting diodes

(2008) Natalie N. Fellows et al.   APPLIED PHYSICS LETTERS

Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

(2008) Natalie Fellows et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure

(2008) Hisashi Masui et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

High-quality nonpolarm-plane GaN substrates grown by HVPE

(2008) Kenji Fujito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Optical polarization ofm-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope

(2008) Hisashi Masui et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Development and prospects of nitride materials and devices with nonpolar surfaces

(2008) Tanya Paskova   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Comparison of InGaN/GaN light emitting diodes grown onm -plane anda -plane bulk GaN substrates

(2008) Hisashi Yamada et al.   Physica Status Solidi-Rapid Research Letters

Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers

(2008) M. Ueda et al.   PHYSICAL REVIEW B