531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

标题
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
作者
关键词
-
出版物
Applied Physics Express
Volume 2, Issue -, Pages 082101
出版商
IOP Publishing
发表日期
2009-07-17
DOI
10.1143/apex.2.082101

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