Investigation of addition of silicon on the electrical properties of low temperature solution processed SiInZnO thin film transistor
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Investigation of addition of silicon on the electrical properties of low temperature solution processed SiInZnO thin film transistor
Authors
Keywords
Oxide thin film transistors, SiInZnO, Solution process
Journal
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
Volume 74, Issue 2, Pages 482-487
Publisher
Springer Nature
Online
2015-01-28
DOI
10.1007/s10971-015-3623-6
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Overview of electroceramic materials for oxide semiconductor thin film transistors
- (2013) Jin-Seong Park et al. JOURNAL OF ELECTROCERAMICS
- Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process
- (2012) Jun Young Choi et al. APPLIED PHYSICS LETTERS
- Review paper: Transparent amorphous oxide semiconductor thin film transistor
- (2011) Jang-Yeon Kwon et al. Electronic Materials Letters
- Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors
- (2011) Sang Yeol Lee et al. THIN SOLID FILMS
- Investigating addition effect of hafnium in InZnO thin film transistors using a solution process
- (2010) Woong Hee Jeong et al. APPLIED PHYSICS LETTERS
- Amorphous silicon–indium–zinc oxide semiconductor thin film transistors processed below 150 °C
- (2010) Eugene Chong et al. APPLIED PHYSICS LETTERS
- Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors
- (2010) Seok-Jun Seo et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors
- (2009) Dongjo Kim et al. APPLIED PHYSICS LETTERS
- Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
- (2009) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
- (2009) Toshio Kamiya et al. Journal of Display Technology
- Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition
- (2009) A K Das et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Zinc tin oxide based driver for highly transparent active matrix OLED displays
- (2009) Patrick Görrn et al. SOLID-STATE ELECTRONICS
- Control of threshold voltage in ZnO-based oxide thin film transistors
- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
- (2008) A. Suresh et al. APPLIED PHYSICS LETTERS
- Solution-Processed Zinc Tin Oxide Semiconductor for Thin-Film Transistors
- (2008) Sunho Jeong et al. Journal of Physical Chemistry C
- Electrochromic properties of porous NiO thin films prepared by a chemical bath deposition
- (2008) X.H. Xia et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now