Composition–Structure–Dielectric Property of Yttrium-Doped Hafnium Oxide Films Deposited by Atomic Layer Deposition

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

(2008) Jaakko Niinistö et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Atomic Layer Deposition of Y[sub 2]O[sub 3] Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor

(2008) Prodyut Majumder et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

First-principles study on doping and phase stability ofHfO2

(2008) Choong-Ki Lee et al.   PHYSICAL REVIEW B

Nitridation and oxynitridation of Si to control interfacial reaction with HfO2

(2008) Rajesh Katamreddy et al.   THIN SOLID FILMS

Charge trapping characteristics in high-k gate dielectrics on germanium

(2008) C. Mahata et al.   THIN SOLID FILMS

Deposition of HfO2 thin films on ZnS substrates

(2007) Qi He et al.   THIN SOLID FILMS