Formation and suppression of misoriented grains in 6H-SiC crystals

Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H–SiC(0001) substrates

(2010) Z.J. Reitmeier et al.   ACTA MATERIALIA

A technique for diameter enlargement in SiC crystal growth

(2010) Shenghuang Lin et al.   International Journal of Materials Research

Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method

(2009) T. H. Peng et al.   CRYSTAL RESEARCH AND TECHNOLOGY

The correlation of the results of capacitance mapping and of sheet resistance mapping in semi-insulating 6H–SiC

(2009) Shenghuang Lin et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Misoriented domain formation in 6H-SiC single crystal

(2009) Bo-Yuan Chen et al.   JOURNAL OF CRYSTAL GROWTH

Photoluminescence in SiCGe thin films grown on 6H-SiC

(2009) Li Lianbi et al.   JOURNAL OF LUMINESCENCE

Identification and control of SiC polytypes in PVT method

(2009) Shenghuang Lin et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Identification of SiC polytypes by etched Si-face morphology

(2009) Ying Yang et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Structure analysis of SiCGe films grown on SiC

(2008) Li Lianbi et al.   SURFACE AND INTERFACE ANALYSIS