Atomic Layer Deposition of Transparent VOxThin Films for Resistive Switching Applications

Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2

(2013) Suhas Kumar et al.   ADVANCED MATERIALS

Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films

(2013) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories

(2013) Seonghyun Kim et al.   MICROELECTRONIC ENGINEERING

Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

(2013) Nagaphani B. Aetukuri et al.   Nature Physics

Cathodic ALD V2O5 thin films for high-rate electrochemical energy storage

(2013) Xinyi Chen et al.   RSC Advances

Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments

(2012) Wootae Lee et al.   APPLIED PHYSICS LETTERS

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

(2012) F. De Stefano et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory

(2012) Fann-Wei Yang et al.   CERAMICS INTERNATIONAL

Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications

(2012) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

(2012) Matthew D Pickett et al.   NANOTECHNOLOGY

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

(2011) D. Walczyk et al.   MICROELECTRONIC ENGINEERING

Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications

(2011) Xinjun Liu et al.   NANOTECHNOLOGY

UV light emitting transparent conducting tin-doped indium oxide (ITO) nanowires

(2011) J Gao et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Low temperature growth of vanadium pentoxide nanomaterials by chemical vapour deposition using VO(acac)2as precursor

(2010) Y Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Temperature sensitive crystallization of V2O5: from amorphous film to β-V2O5nanorods

(2009) C. W. Zou et al.   CRYSTENGCOMM