Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

(2011) Jungho Shin et al.   JOURNAL OF APPLIED PHYSICS

Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals

(2010) Z. Yang et al.   JOURNAL OF APPLIED PHYSICS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Direct Correlation of Structural Domain Formation with the Metal Insulator Transition in a VO2Nanobeam

(2009) Shixiong Zhang et al.   NANO LETTERS