Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes

(2014) Patrick M. McBride et al.   APPLIED PHYSICS LETTERS

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

(2014) Tsung-Jui Yang et al.   JOURNAL OF APPLIED PHYSICS

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

(2014) Lorenzo Mancini et al.   Journal of Physical Chemistry C

Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography

(2013) Ravi Shivaraman et al.   APPLIED PHYSICS LETTERS

Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

(2013) Hongping Zhao et al.   Journal of Display Technology

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

(2013) I. A. Prudaev et al.   SEMICONDUCTORS

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

(2012) Yuh-Renn Wu et al.   APPLIED PHYSICS LETTERS

Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

(2011) T. J. Prosa et al.   APPLIED PHYSICS LETTERS

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

(2011) D. S. Sizov et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

The investigation on carrier distribution in InGaN/GaN multiple quantum well layers

(2011) J. H. Zhu et al.   JOURNAL OF APPLIED PHYSICS

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

(2011) D. Watson-Parris et al.   PHYSICAL REVIEW B

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

(2008) Shi Jong Leem et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY