Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions

Elastic constants and critical thicknesses of ScGaN and ScAlN

(2013) S. Zhang et al.   JOURNAL OF APPLIED PHYSICS

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

(2013) Siyuan Zhang et al.   JOURNAL OF APPLIED PHYSICS

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-ScxAl1−xN thin films

(2012) Agne Zukauskaite et al.   JOURNAL OF APPLIED PHYSICS

InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

(2011) V. Kachkanov et al.   APPLIED PHYSICS LETTERS

Growth, microstructure and morphology of epitaxial ScGaN films

(2011) S. M. Knoll et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Dislocation movement in GaN films

(2010) M. A. Moram et al.   APPLIED PHYSICS LETTERS

Increased electromechanical coupling in w−ScxAl1−xN

(2010) Gunilla Wingqvist et al.   APPLIED PHYSICS LETTERS

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics

The effect of oxygen incorporation in sputtered scandium nitride films

(2008) M.A. Moram et al.   THIN SOLID FILMS