Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3489939
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Funding
- Swedish Foundation for Strategic Research (SSF) Center on Materials Science for nanoscale Surface Engineering (MS2E)
- Swedish Research Council Linnaeus
- Knut and Alice Wallenberg foundation
- Swedish National Infrastructure for Computing (SNIC)
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AlN is challenged as the material choice in important thin film electroacoustic devices for modern wireless communication applications. We present the promise of superior electromechanical coupling (k(t)(2)), in w-ScxAl1-xN by studying its dielectric properties. w-ScxAl1-xN (0 <= x <= 0.3) thin films grown by dual reactive magnetron sputtering exhibited low dielectric losses along with minor increased dielectric constant (epsilon). Ellipsometry measurements of the high frequency epsilon showed good agreement with density function perturbation calculations. Our data show that k(t)(2) will improve from 7% to 10% by alloying AlN with up to 20 mol % ScN. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3489939]
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