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Title
Tensely strained GeSn alloys as optical gain media
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 19, Pages 192110
Publisher
AIP Publishing
Online
2013-11-08
DOI
10.1063/1.4829360
References
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Related references
Note: Only part of the references are listed.- Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors
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- (2013) Suyog Gupta et al. NANO LETTERS
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- Radiative recombination and optical gain spectra in biaxially strainedn-type germanium
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- (2013) S. Wirths et al. ECS Journal of Solid State Science and Technology
- Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4
- (2012) R. T. Beeler et al. APPLIED PHYSICS LETTERS
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- (2012) Kain Lu Low et al. JOURNAL OF APPLIED PHYSICS
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- (2012) Pairot Moontragoon et al. JOURNAL OF NON-CRYSTALLINE SOLIDS
- An electrically pumped germanium laser
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- Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers
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- Silicon optical modulators
- (2010) G. T. Reed et al. Nature Photonics
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