Article
Engineering, Electrical & Electronic
Khushwant Sehra, Anupama Chanchal, Anupama Anand, Vandana Kumari, Meena Reeta, Mridula Gupta, Meena Mishra, D. S. Rawal, Manoj Saxena
Summary: This study investigates the impact of a ?-shaped gate on the microwave performance of a thin GaN buffer AlGaN/GaN HEMT. A simulation based on an in-house fabricated thin GaN HEMT demonstrates that coupling a ?-shaped gate with a thin GaN buffer improves the reliability of the device. The gate modification enhances the breakdown characteristics and thermal reliability for continuous wave operation, while also improving the pulsed mode operation. This research opens up the possibility of further improving the RF performance of GaN HEMTs by using a ?-shaped gate with a thin GaN buffer to mitigate dispersive trapping effects.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
P. Vigneshwara Raja, Emmanuel Dupouy, Mohamed Bouslama, Raphael Sommet, Jean-Christophe Nallatamby
Summary: This paper presents a simplified analytical expression to estimate the dynamic reduction in the 2DEG density due to buffer trapping in GaN-based HEMTs, which is essential for evaluating the current collapse effects. The validity of the expression is demonstrated through experimental results, and it is found that C-doped HEMTs exhibit more pronounced current collapse effects compared to Fe-doped HEMTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Khushwant Sehra, Vandana Kumari, Mridula Gupta, Meena Mishra, D. S. Rawal, Manoj Saxena
Summary: The study demonstrates the superiority of Pi-shaped Gate p-GaN HEMT in enhancement mode operation, effectively suppressing leakage currents, enhancing breakdown characteristics, and mitigating trap-related dispersive effects.
MICROELECTRONICS RELIABILITY
(2022)
Article
Engineering, Electrical & Electronic
R. Tomita, S. Ueda, T. Kawada, H. Mitsuzono, K. Horio
Summary: It is observed that the breakdown voltage of AlGaN/GaN HEMTs can be increased by using a high-k passivation layer, with different deep-acceptor density and gate-to-drain distance affecting the breakdown mechanism and electric field distribution.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Sujan Sarkar, Ramdas P. Khade, Amitava DasGupta, Nandita DasGupta
Summary: The effect of the GaN cap layer on the performance of AlInN/GaN-based HEMTs has been studied. The addition of the GaN cap layer reduces gate leakage current, increases saturation drain current, improves subthreshold swing, and enhances the I-ON/I-OFF ratio of HEMTs. It also reduces the current collapse due to gate-lag and drain-lag and improves breakdown voltage.
MICROELECTRONIC ENGINEERING
(2022)
Article
Engineering, Electrical & Electronic
Yan Cheng, Jiabei He, Han Xu, Kailun Zhong, Zheyang Zheng, Jiahui Sun, Kevin J. Chen
Summary: The gate reliability of Schottky-type p-GaN gate HEMTs under AC positive gate bias stress can be prolonged with a switching drain bias, due to the drain-induced hole insufficiency in the gate stack at large V-DSQ. This mechanism suppresses electron injection from the 2DEG channel to the p-GaN gate, weakening hot-electron generation and prolonging the gate lifetime.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Arghyadeep Sarkar, Yaser M. Haddara
Summary: We have developed a numerical model for predicting and analyzing gate leakage current in normally off pGaN/AlGaN/GaN high electron mobility transistors. The model has been validated against experimental data from multiple research groups and proven to be accurate and reliable.
SOLID-STATE ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Arathy Varghese, Chinnamuthan Periasamy, Lava Bhargava, Surani Bin Dolmanan, Sudhiranjan Tripathy
Summary: The research involves the development of a C-MOSHEMT sensor for pH detection application, with modeling, fabrication, and sensitivity analysis conducted. Experimental results show the impact of increasing sensing area on sensitivity.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Rohit Yadav, Aloke K. Dutta
Summary: In this article, a new charge-based analytical model for the gate current in GaN HEMTs is presented, which incorporates the effect of the barrier layer charge and the potentials dropped across the gate-source and gate-drain access regions. Individual models have been developed for the four contributors to the gate current. The model's accuracy has been validated by comparing its results with experimental data.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Burak Gunes, Amir Ghobadi, Oguz Odabasi, Bayram Butun, Ekmel Ozbay
Summary: This paper investigates the impact of an ultrathin 1.5 nm atomic-layer-deposited HfO2 layer on GaN high-electron-mobility transistors (HEMTs) grown on a 4H-SiC substrate. The technique involves HfO2 deposition at 250 °C before metallization, reducing drain lag by 83%. The HfO2 layer suppresses parasitic lateral conduction, improves surface trapping, and enhances gate electrostatics, resulting in decreased surface leakage and improved device performance by 16% in terms of cutoff frequency.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Zuoheng Jiang, Xinyu Wang, Junlei Zhao, Junting Chen, Jinjin Tang, Chengcai Wang, Haohao Chen, Sen Huang, Xiaolong Chen, Mengyuan Hua
Summary: It is found that frozen hole traps alter the gate leakage mechanism from PF emission to TAT, highlighting the importance of understanding the role of hole traps in gate leakage for accurately predicting and optimizing device performance in cryogenic temperatures.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Yonghao Du, Weizong Xu, Hehe Gong, Jiandong Ye, Feng Zhou, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Summary: This research explores the device configuration of p-NiO(x) gate cap layer and thin AlGaN barrier layer for normally-off operation in AlGaN/GaN high electron mobility transistors. The results show that this structure provides good gate controllability and channel conduction capability.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh
Summary: A virtual gate model with surface traps at the gate edge of the drain side is established for AlGaN/GaN HEMT, demonstrating the effectiveness of a Field Plate in enhancing sheet carrier density and suppressing current collapse. Simulation results show that the Field Plate has great control over electric field and trapped carrier density at the gate edge of the device.
MICROELECTRONICS JOURNAL
(2021)
Article
Chemistry, Physical
Jagori Raychaudhuri, Jayjit Mukherjee, Rajesh Bag, Amit Malik, Sudhir Kumar, D. S. Rawal, Meena Mishra, Santanu Ghosh
Summary: In this study, an AlGaN/GaN HEMT device with a thin buffer structure and moderate C-doping was investigated. The effects of bulk traps on the device were studied through DC characterization, Capacitance-Voltage (CV) measurements, and RF measurements. The results showed that the buffer structure was less vulnerable to traps and exhibited good isolation.
Article
Engineering, Electrical & Electronic
Kai Liu, Chong Wang, Xuefeng Zheng, Xiaohua Ma, Zeyang Huang, Yunlong He, Ang Li, Yaopeng Zhao, Wei Mao, Yue Hao
Summary: This study fabricated p-type GaN cap layer high electron mobility transistors (p-GaN HEMTs) with Ti/Au gate metal and utilized post gate annealing treatment to improve device characteristics. The results show high drain current and threshold voltage in the p-GaN HEMTs, along with good dynamic characteristics and high-temperature stability.
SOLID-STATE ELECTRONICS
(2021)