Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

(2012) Junghyo Nah et al.   Journal of Physical Chemistry C

III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

(2012) Junghyo Nah et al.   NANO LETTERS

Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

(2012) Chuan Wang et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Graphene and boron nitride lateral heterostructures for atomically thin circuitry

(2012) Mark P. Levendorf et al.   NATURE

Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

(2012) Woo Jong Yu et al.   NATURE MATERIALS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

(2012) L. Britnell et al.   SCIENCE

Nanoscale Semiconductor “X” on Substrate “Y” - Processes, Devices, and Applications

(2011) Morten Madsen et al.   ADVANCED MATERIALS

Ultrathin body InAs tunneling field-effect transistors on Si substrates

(2011) Alexandra C. Ford et al.   APPLIED PHYSICS LETTERS

Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator

(2011) Hui Fang et al.   APPLIED PHYSICS LETTERS

Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

(2011) Kuniharu Takei et al.   APPLIED PHYSICS LETTERS

Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes

(2011) Kuniharu Takei et al.   NANO LETTERS

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

(2011) Alexander S. Mayorov et al.   NANO LETTERS

Tunable metal–insulator transition in double-layer graphene heterostructures

(2011) L. A. Ponomarenko et al.   Nature Physics

Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

(2010) Lingquan Wang et al.   IEEE ELECTRON DEVICE LETTERS

Gas Detection with Vertical InAs Nanowire Arrays

(2010) Peter Offermans et al.   NANO LETTERS

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

(2010) Hyunhyub Ko et al.   NATURE

The rise of the laser

(2010) Joerg Heber   NATURE MATERIALS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

(2008) Ning Li et al.   APPLIED PHYSICS LETTERS