Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

Nanoscale Semiconductor “X” on Substrate “Y” - Processes, Devices, and Applications

(2011) Morten Madsen et al.   ADVANCED MATERIALS

Ultrathin body InAs tunneling field-effect transistors on Si substrates

(2011) Alexandra C. Ford et al.   APPLIED PHYSICS LETTERS

Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator

(2011) Hui Fang et al.   APPLIED PHYSICS LETTERS

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

(2011) Brian R. Bennett et al.   MRS BULLETIN

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

(2010) Masafumi Yokoyama et al.   APPLIED PHYSICS LETTERS

Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

(2010) Dae-Hyun Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

(2010) Hyunhyub Ko et al.   NATURE

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

(2010) Jongseung Yoon et al.   NATURE

Formation and Characterization of NixInAs/InAs Nanowire Heterostructures by Solid Source Reaction

(2008) Yu-Lun Chueh et al.   NANO LETTERS