Single-particle tunneling in doped graphene-insulator-graphene junctions

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(2016)   ADVANCED MATERIALS

Single step, complementary doping of graphene

(2010) Kevin Brenner et al.   APPLIED PHYSICS LETTERS

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence

(2010) D. Basu et al.   PHYSICAL REVIEW B

Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping

(2010) C. Coletti et al.   PHYSICAL REVIEW B

Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

(2009) S.K. Banerjee et al.   IEEE ELECTRON DEVICE LETTERS

Large-scale pattern growth of graphene films for stretchable transparent electrodes

(2009) Keun Soo Kim et al.   NATURE

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

(2009) X. Li et al.   SCIENCE

Atomic Hole Doping of Graphene

(2008) Isabella Gierz et al.   NANO LETTERS

Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

(2008) Alfonso Reina et al.   NANO LETTERS

Interface structure of epitaxial graphene grown on 4H-SiC(0001)

(2008) J. Hass et al.   PHYSICAL REVIEW B

Rotational disorder in few-layer graphene films on6H−SiC(000−1): A scanning tunneling microscopy study

(2008) François Varchon et al.   PHYSICAL REVIEW B