High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
出版年份 2013 全文链接
标题
High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 14, Pages 142106
出版商
AIP Publishing
发表日期
2013-04-12
DOI
10.1063/1.4801861
参考文献
相关参考文献
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