Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO[sub 2] Thin Films

Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

(2009) Sheng-Yu Wang et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

(2008) T. Harada et al.   APPLIED PHYSICS LETTERS

Electrical Properties and Fatigue Behaviors of ZrO[sub 2] Resistive Switching Thin Films

(2008) Chih-Yang Lin et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B