Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5−x/TiOxNy framework
Published 2013 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5−x/TiOxNy framework
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 18, Pages 183510
Publisher
AIP Publishing
Online
2013-11-01
DOI
10.1063/1.4828561
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations
- (2013) Ah Rahm Lee et al. APPLIED PHYSICS LETTERS
- Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix
- (2013) Ah Rahm Lee et al. APPLIED SURFACE SCIENCE
- Resistive switching phenomena in thin films: Materials, devices, and applications
- (2012) D.B. Strukov et al. MRS BULLETIN
- Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer
- (2012) Guangsheng Tang et al. Nanoscale
- Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks
- (2011) Yoon Cheol Bae et al. ADVANCED FUNCTIONAL MATERIALS
- Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts
- (2011) Yoon Cheol Bae et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
- (2011) Yu-Ting Tsai et al. APPLIED PHYSICS LETTERS
- Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
- (2010) Ruth Muenstermann et al. ADVANCED MATERIALS
- Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks
- (2010) June Sik Kwak et al. APPLIED PHYSICS LETTERS
- Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure
- (2010) Inrok Hwang et al. APPLIED PHYSICS LETTERS
- A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
- (2010) Li-Wei Feng et al. APPLIED PHYSICS LETTERS
- Effect of ambient gas on structural and optical properties of titanium oxynitride films
- (2010) Sushant K. Rawal et al. APPLIED SURFACE SCIENCE
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- TiN electrode-induced bipolar resistive switching of TiO2 thin films
- (2009) Young Ho Do et al. CURRENT APPLIED PHYSICS
- High density 3D memory architecture based on the resistive switching effect
- (2009) C. Kügeler et al. SOLID-STATE ELECTRONICS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- Atomic layer deposition of titanium nitride from TDMAT precursor
- (2008) J. Musschoot et al. MICROELECTRONIC ENGINEERING
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More