Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

(2010) June Sik Kwak et al.   APPLIED PHYSICS LETTERS

A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures

(2010) Li-Wei Feng et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

(2010) Min-Chen Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices

(2010) Yu-Ting Tsai et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films

(2009) Kyung Min Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Keiji Shono et al.   Applied Physics Express

Enhancement of Switching Capability on Bipolar Resistance Switching Device with Ta/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Hiroyasu Kawano et al.   Applied Physics Express