High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

High internal and external quantum efficiency InGaN/GaN solar cells

(2011) Elison Matioli et al.   APPLIED PHYSICS LETTERS

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

(2010) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

InGaN/GaN multiple quantum well concentrator solar cells

(2010) R. Dahal et al.   APPLIED PHYSICS LETTERS

Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy

(2010) J. J. M. Law et al.   APPLIED PHYSICS LETTERS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Growth, fabrication, and characterization of InGaN solar cells

(2008) X. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE