High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

(2011) Yousuke Kuwahara et al.   Applied Physics Express

High internal and external quantum efficiency InGaN/GaN solar cells

(2011) Elison Matioli et al.   APPLIED PHYSICS LETTERS

Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

(2010) K. Y. Lai et al.   APPLIED PHYSICS LETTERS

The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

(2010) J. J. Wierer et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Progress and challenges for next-generation high-efficiency multijunction solar cells

(2010) D.J. Friedman   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

Demonstration of a III–Nitride/Silicon Tandem Solar Cell

(2009) Lothar A. Reichertz et al.   Applied Physics Express

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

(2009) R. Dahal et al.   APPLIED PHYSICS LETTERS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS