Simulation study of channel mobility and device performance dependence on gate stack in graphene field-effect transistors
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Title
Simulation study of channel mobility and device performance dependence on gate stack in graphene field-effect transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 11, Pages 112104
Publisher
AIP Publishing
Online
2012-03-15
DOI
10.1063/1.3693410
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