Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage

Published 2011 View Full Article

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Title
Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage
Authors
Keywords
-
Journal
ACS Nano
Volume 5, Issue 6, Pages 5031-5037
Publisher
American Chemical Society (ACS)
Online
2011-04-30
DOI
10.1021/nn201115p

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